High dielectric constant material containing tantalum, process f

Details High dielectric constant material containing tantalum, process f High dielectric constant material containing tantalum, process f

1995-03-16

1997-10-14

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272481, 4272552, 4272553, 427590, 437235, C23C 1634

Patent

active

056770154

ABSTRACT:
A high dielectric constant material containing tantalum expressed by chemical formula Ta.sub.x O.sub.y N.sub.z, where x, y, and z are each a value which in total yield 1, z is 0.1 or higher but 0.625 or lower, y is 0 or higher but 0.6 or lower, and 0.4y and 0.6z in total equals to the value of x or lower, and a process for depositing a film of the material by means of chemical vapor deposition using Cp.sub.m Ta(N.sub.3).sub.n, where Cp represents cyclopentane, and m+n=5, or using a gaseous tantalum-containing organometallic compound, or by a means comprising plasma treatment under a gas containing nitrogen. Also claimed are a semiconductor device and a MOS transistor using the high dielectric film containing tantalum.

REFERENCES:
patent: 4943450 (1990-07-01), Sarin
patent: 4947081 (1990-08-01), Ohiwa et al.
patent: 5178911 (1993-01-01), Gordon et al.
patent: 5248629 (1993-09-01), Muroyama
patent: 5352623 (1994-10-01), Kamiyama

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