High dielectric constant device

Details High dielectric constant device High dielectric constant device

2007-02-27

2007-02-27

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000

Reexamination Certificate

active

10459360

ABSTRACT:
Dielectric material compositions comprising HfO2and a second compound are disclosed. The compositions are characterized by at least a part of the compositions being in a cubic crystallographic phase. Further, semiconductor based devices comprising such dielectric material compound and method for forming such compounds are disclosed.

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patent: 6528858 (2003-03-01), Yu et al.
patent: 6693321 (2004-02-01), Zheng et al.
Published European Search Report Application No. 03447146.6-2102-, for Interuniversitaire Microelectronica Centrum vzw, dated Sep. 17, 2003.
Kukli K et al.,Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors, Preparation and Characterization, Elsevier Sequoia, NL, vol. 416, No. 1-2, pp. 72-79, Sep. 2, 2002.
Gusev E.P. et al.,Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues, Microelectronic Engineering, Elsevier Publishers BV, Amsterdam, NL, vol. 59, No. 1-4, pp. 341-349, Nov. 2001.
Byoung Hun Lee, et al.,Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing, Applied Physics Letters, vol. 76, No. 14, pp. 1926-1928, Apr. 3, 2000.
Stefanic, et al.,The influence of thermal treatment on phase development in ZrO2-Fe2O3and HfO2—Fe2O3systems, Journals of Alloys and Compounds, Elsevier Sequoia, Lausanne, CH, vol. 327, No. 1-2, pp. 151-160, Aug. 30, 2001.
Kadlec, et al.,High-temperature infrared reflectivity of yttria-stabilized hafnia single crystals, Materials Science and Engineering B, Elsevier Sequoia, Lausanne, CH, vol. 72, No. 1, pp. 56-58, Mar. 2000.

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