High dielectric constant capacitor and method for manufacturing

Details High dielectric constant capacitor and method for manufacturing High dielectric constant capacitor and method for manufacturing

1992-06-17

1993-03-16

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 257528, H01G 700, H01G 900, H01G 406

Patent

active

051950189

ABSTRACT:
A high dielectric constant film comprised of at least a first dual-film layer, which includes a first tantalum oxide film, and a first metal oxide film which is made of a metal oxide whose valence is smaller than that of tantalum, and whose dielectric constant is equal to or greater than that of tantalum oxide. The first metal oxide film preferably has a thickness of less than approximately 50 angstroms, in order to thereby avoid the formation of a columnar structure, which has been identified as a principal cause of the high leakage current problem which has plagued presently available high dielectric constant capacitors. The first tantalum oxide film preferably has a thickness in the range of between approximately 5 angstroms to approximately 200 angstroms, with the ratio of the thickness of the first tantalum oxide film to the thickness of the first metal oxide film being in the range of 1:10 to 100:1. The high dielectric constant film preferably further includes a plurality of additional dual-film layers formed on the first dual-film layer, to thereby provide a multilayer high dielectric constant film. Each of the additional dual-film layers is preferably of the same construction as that of the first dual-film layer.
The present invention also encompasses a high dielectric constant capacitor which incorporates the above-described high dielectric constant film, and a method for manufacturing the same.

REFERENCES:
patent: 4437139 (1984-03-01), Howard
patent: 4734340 (1988-03-01), Saito et al.
patent: 4959745 (1990-09-01), Suguro
patent: 5111355 (1992-05-01), Anand et al.
M. Saitoh, T. Mori and H. Tamura; "Electrical Properties of THIN Ta.sub.2 O.sub.5 Films Grown by Chemical Vapor Deposition"; 1986 IEEE, pp. 680-683, CH. 2381.

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