High dielectric capacitor having low current leakage

Details High dielectric capacitor having low current leakage High dielectric capacitor having low current leakage

1991-04-10

1993-02-23

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257532, H01L 2968, H01L 2702, H01L 2934

Patent

active

051895030

ABSTRACT:
A dielectric insulation film consists of a metal oxide and pieces of dissimilar metal element added to the metal oxide. A positive charge number under an ionized state of the dissimilar metal element is smaller by one than that of the metal oxide. An ionic charge number of the dissimilar metal element is of a predetermined one kind. The dielectric insulation film is formed as an insulation film of capacitor of each cell of a semiconductor device according to a chemical vapor deposition (CVD) method in the process of forming cells of the semiconductor device.

REFERENCES:
patent: 3633870 (1972-05-01), Tsutsumi et al.
patent: 4636833 (1987-01-01), Nishioka et al.
patent: 4811076 (1989-03-01), Tigelaar et al.
patent: 4903110 (1990-02-01), Aono
patent: 4937650 (1990-12-01), Shinriki et al.
M. Saitoh et al., "Electrical Properties of Thin Ta.sub.2 O.sub.5 Films Grown By Chemical Vapor Deposition," IEDM Technical Digest, (Dec. 1986), pp. 680-683.

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