High depth-to-width ratio etching process for monocrystalline ge

Metal working – Method of mechanical manufacture – Assembling or joining

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29572, 29578, 29589, 29591, 357 60, 156 17, 156 18, B01J 1700, H01L 3118

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039770710

ABSTRACT:
A process for etching high depth-to-width ratio grooves in the surface of monocrystalline germanium-comprising semiconductor material by orienting the material so that the surface to be etched is parallel to a (110) plane of the crystal structure; orienting an etching mask on that surface such that the length of the groove to be etched is parallel to a (111) plane of the crystal which is normal to said surface; and subjecting the semiconductor material to a preferential etchant which attacks fastest in a [110] direction of a germanium crystal and slowest in a [111] direction.

REFERENCES:
patent: 3151379 (1964-10-01), Escoffery
patent: 3162507 (1964-12-01), Dermatis et al.
patent: 3227580 (1966-01-01), Thornton
patent: 3266961 (1966-08-01), Emels
patent: 3290753 (1966-12-01), Chang
patent: 3423261 (1969-01-01), Frantzen
patent: 3436285 (1969-04-01), Wilkes
patent: 3490943 (1970-01-01), Werdt
patent: 3508980 (1970-04-01), Jackson, Jr. et al.
Arthur P. Honess; The Nature, Origin, and Interpretation of the Etch Figures on Crystals, John Wiley & Son Inc., New York, 1927 pp. 6, 14, 15 & 27.

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