High density two port SRAM cell for low voltage CMOS application

Details High density two port SRAM cell for low voltage CMOS application High density two port SRAM cell for low voltage CMOS application

1995-05-12

1998-01-20

Nelms, David C.

Static information storage and retrieval

Addressing

Multiple port access

36518905, 365154, G11C 1100

Patent

active

057107424

ABSTRACT:
A two-port memory cell design which permits simultaneous reading and writing of cells which are on the same wordline but on different Bit Select lines without increase in Read Access Time, and while maintaining memory functionality at low voltages. The memory cell uses a standard 6 transistor design to provide a differential read for fast access plus another three transistors are added to each cell to provide a means of differentially writing the cell and de-gating the write if the bit-select is not active. This cell design has applicability to multi-port memories as well.

REFERENCES:
patent: 4719596 (1988-01-01), Bernstein et al.
patent: 4764899 (1988-08-01), Lewallen et al.
patent: 5034924 (1991-07-01), Taniguchi et al.
patent: 5068852 (1991-11-01), Mahant-Shetti et al.
patent: 5260908 (1993-11-01), Ueno
patent: 5282174 (1994-01-01), Little
patent: 5287323 (1994-02-01), Takahashi et al.
patent: 5289432 (1994-02-01), Dhong et al.
patent: 5299158 (1994-03-01), Mason et al.
patent: 5307322 (1994-04-01), Usami et al.
patent: 5317536 (1994-05-01), Aoyama
patent: 5327372 (1994-07-01), Oka et al.
patent: 5335199 (1994-08-01), Aoyama
patent: 5396449 (1995-03-01), Atallah et al.
patent: 5469380 (1995-11-01), Iio

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