High density trenched DMOS transistor

Details High density trenched DMOS transistor High density trenched DMOS transistor

1995-08-21

1997-11-18

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257329, 257330, 257341, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056891288

ABSTRACT:
The cell density of a trenched DMOS transistor is increased by overcoming the problem of lateral diffusion of deep P+body regions. This problem is solved in three versions. In a first version, the deep P+body region is formed using a high energy implant into a single epitaxial layer. In a second version, a double epitaxial layer is used with a somewhat lower but still high energy deep P+body implant. In a third version, there is no deep P+body implant but only the double epitaxial layer is used. The cell density is improved to more than 12 million cells per square inch in each of the three versions.

REFERENCES:
patent: 4931408 (1990-06-01), Hshieh
patent: 5298442 (1994-03-01), Bulucea et al.
patent: 5304831 (1994-04-01), Yilmaz et al.
patent: 5316959 (1994-05-01), Kwan et al.
patent: 5341011 (1994-08-01), Hshieh et al.
patent: 5404040 (1995-04-01), Hshieh et al.
patent: 5410170 (1995-04-01), Bulucea et al.
patent: 5429964 (1995-07-01), Yilmaz et al.
patent: 5468982 (1995-11-01), Hshieh et al.
patent: 5474943 (1995-12-01), Hshieh et al.
patent: 5479037 (1995-12-01), Hshieh et al.
patent: 5486772 (1996-01-01), Hshieh et al.

Affiliated with

Also associated with

Rating

High density trenched DMOS transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density trenched DMOS transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density trenched DMOS transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1568152