High density trench FET with integrated Schottky diode and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S328000, C257S329000, C257S409000, C257SE21418, C257SE21419

Reexamination Certificate

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07446374

ABSTRACT:
A monolithically integrated trench FET and Schottky diode includes a pair of trenches terminating in a first silicon region of first conductivity type. Two body regions of a second conductivity type separated by a second silicon region of the first conductivity type are located between the pair of trenches. A source region of the first conductivity type is located over each body region. A contact opening extends between the pair of trenches to a depth below the source regions. An interconnect layer fills the contact opening so as to electrically contact the source regions and the second silicon region. Where the interconnect layer electrically contacts the second silicon region, a Schottky contact is formed.

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