High density trench DMOS transistor with trench bottom implant

Details High density trench DMOS transistor with trench bottom implant High density trench DMOS transistor with trench bottom implant

1997-11-04

1999-07-27

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059294817

ABSTRACT:
A trenched DMOS transistor overcomes the problem of a parasitic JFET at the trench bottom (caused by deep body regions extending deeper than the trench) by providing a doped trench bottom implant region at the bottom of the trench and extending into the surrounding drift region. This trench bottom implant region has the same doping type, but is more highly doped, than the surrounding drift region. The trench bottom implant region significantly reduces the parasitic JFET resistance by optimizing the trench bottom implant dose, without creating reliability problems.

REFERENCES:
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4642666 (1987-02-01), Lidow et al.
patent: 4893160 (1990-01-01), Blanchard
patent: 4964080 (1990-10-01), Tzeng
patent: 5298442 (1994-03-01), Buluccea et al.
patent: 5442214 (1995-08-01), Yang
patent: 5558313 (1996-09-01), Hshieh et al.
patent: 5714781 (1998-02-01), Yamamoto et al.
patent: 5821583 (1998-10-01), Hsieh et al.
patent: 5866931 (1999-02-01), Buluccea et al.
patent: B14376286 (1993-07-01), Lidow et al.

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