High density transistor component and its manufacturing method

Details High density transistor component and its manufacturing method High density transistor component and its manufacturing method

1997-08-26

1999-09-28

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257353, 257 66, H01L 2701, H01L 310392

Patent

active

059593318

ABSTRACT:
A high density transistor component and its manufacturing method which includes the steps of forming a pad oxide layer above a silicon substrate, forming a dielectric layer above the pad oxide layer, and growing an epitaxial silicon layer above the pad oxide layer covering the pad oxide layer as well as the dielectric layer. Source/drain regions including the heavily doped source/drain and the lightly doped source/drain are formed in the epitaxial silicon layer, and a gate terminal region composed from an assembly of a gate oxide layer, a gate terminal and two spacers is formed above the epitaxial silicon layer. The channel is located in the spatial location between the dielectric layer, the gate region and the source/drain regions.

REFERENCES:
patent: 5338965 (1994-08-01), Mahli
Silicon Processing for the VLSI Era, vol. 3: The Submicron MOSFET, pp.205-207, 591-592, S. Wolf, Lattice Press, 1995.

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