High density SRAM circuit with single-ended memory cells

Details High density SRAM circuit with single-ended memory cells High density SRAM circuit with single-ended memory cells

1992-03-09

1993-11-23

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, G11C 1100, G11C 1700

Patent

active

052650472

ABSTRACT:
A high density, static random access memory (SRAM) circuit with single-ended memory cells employs a plurality of (4T-2R) or (6T) type SRAM cells and a regenerative sense amplifier. Each of the SRAM cells employs a single bit-line (BL) and two word lines.

REFERENCES:
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patent: 4872141 (1989-10-01), Plus et al.
patent: 4995001 (1991-02-01), Dawson et al.
patent: 5040146 (1991-08-01), Mattausch et al.
patent: 5047979 (1991-09-01), Leung
patent: 5189640 (1993-02-01), Huard

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