High density SRAM circuit with ratio independent memory cells

Details High density SRAM circuit with ratio independent memory cells High density SRAM circuit with ratio independent memory cells

1990-06-15

1991-09-10

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

36518901, G11C 1300

Patent

active

050479792

ABSTRACT:
Briefly, a high density, static, random access memory (SRAM) circuit with ratio independent memory cells employs a number (plurality) of (4T-2R) or (6T) type SRAM cells and a regenerative sense amplifier. Each of the SRAM cells of the present invention differs from corresponding, prior art type SRAM cells in that the SRAM cells of the present invention each include transistors of similar size (channel width).

REFERENCES:
patent: 4954992 (1990-09-01), Kumanoya et al.

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