High density SRAM cell with hybrid devices

Details High density SRAM cell with hybrid devices High density SRAM cell with hybrid devices

2011-03-29

2011-03-29

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S217000

Reexamination Certificate

active

07915691

ABSTRACT:
Hybrid SRAM circuit, hybrid SRAM structures and method of fabricating hybrid SRAMs. The SRAM structures include first and second cross-coupled inverters coupled to first and second pass gate devices. The pull-down devices of the inverters are FinFETs while the pull-up devices of the inverters and the pass gate devices are planar FETs or pull-down and pull-up devices of the inverters are FinFETs while the pass gate devices are planar FETs.

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patent: 2006/0227595 (2006-10-01), Chuang et al.

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