Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-03
2005-05-03
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000, C257S303000, C257S296000, C257S304000, C257S330000, C257S331000, C257S332000, C257S410000, C257S411000, C257S412000
Reexamination Certificate
active
06888199
ABSTRACT:
Disclosed is a method and structure for forming a split-gate fin-type field effect transistor (FinFET). The invention produces a split-gate fin-type field effect transistor (FinFET) that has parallel fin structures. Each of the fin structures has a source region at one end, a drain region at the other end, and a channel region in the middle portion. Back gate conductors are positioned between channel regions of alternating pairs of the fin structures and front gate conductors are positioned between channel regions of opposite alternating pairs of the fin structures. Thus, the back gate conductors and the front gate conductors are alternatively interdigitated between channel regions of the fin structures.
REFERENCES:
patent: 6316296 (2001-11-01), Sakamoto
patent: 6339002 (2002-01-01), Chan et al.
patent: 6346446 (2002-02-01), Ritenour
patent: 6413802 (2002-07-01), Hu et al.
patent: 6433609 (2002-08-01), Voldman
patent: 6483156 (2002-11-01), Adkisson et al.
patent: 6492212 (2002-12-01), Ieong et al.
patent: 6504201 (2003-01-01), Noble et al.
patent: 6580124 (2003-06-01), Cleeves et al.
patent: 20020093053 (2002-07-01), Chan et al.
patent: 20020098657 (2002-07-01), Alavi et al.
patent: 20020105039 (2002-08-01), Hanafi et al.
Nowak Edward J.
Rainey BethAnn
Erdem Fazli
Flynn Nathan J.
International Business Machines - Corporation
McGinn & Gibb PLLC
Sabo, Esq. William D.
LandOfFree
High-density split-gate FinFET does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-density split-gate FinFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-density split-gate FinFET will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3416814