Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-01
2005-11-01
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000, C257S310000
Reexamination Certificate
active
06960801
ABSTRACT:
A single transistor ferroelectric memory (“FEM”) cell, useful for high density ferroelectric random access memory (“FRAM”) applications, and a method for making the same, are herein disclosed. The FEM cell comprises a FEM gate unit having a top electrode, a ferroelectric material layer, and a bottom electrode. The FEM gate unit is disposed above a semiconductor substrate having defined on it a well region and channel of a first conductive type and a source and drain of a second conductive type. A conductive upper polysilicon layer covers both the FEM gate unit and a portion of the source region and is in electrical communication with the top electrode of the FEM gate unit. The drain is in electrical communication with the bottom electrode of the FEM gate unit and serves as the bit line for the FEM memory cell. The source is shared between the present memory cell and an adjacent cell.
REFERENCES:
patent: 5300799 (1994-04-01), Nakamura et al.
patent: 5506748 (1996-04-01), Hoshiba
patent: 5559733 (1996-09-01), McMillan et al.
patent: 5708284 (1998-01-01), Onishi
patent: 5731608 (1998-03-01), Hsu et al.
patent: 5798548 (1998-08-01), Fujiwara
patent: 5877054 (1999-03-01), Yamauchi
patent: 5959879 (1999-09-01), Koo
patent: 6100558 (2000-08-01), Krivokapic et al.
patent: 6172392 (2001-01-01), Schmidt et al.
patent: 6191441 (2001-02-01), Aoki et al.
patent: 6294807 (2001-09-01), Chittipeddi et al.
patent: 6339008 (2002-01-01), Takenaka
patent: 6420742 (2002-07-01), Ahn et al.
patent: WO 00/28596 (2000-05-01), None
Jaeger, vol. V: Introduction to Microelectronic Fabrication, Addison-Wesley Publiching Company 1993, pp. 79.
“Application of Sr2Nb207Family Ferroelectric Films for Ferroelectric Memory Field Effect Transistor”, Copyright 1998 Publication Board,Japanese Journal of Applied Physics, vol. 37, pp. 5207-5210.
Macronix International Co. Ltd.
Pizarro Marcos D.
Weiss Howard
Workman Nydegger
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