High density SIMM or DIMM with RAS address re-mapping

Details High density SIMM or DIMM with RAS address re-mapping High density SIMM or DIMM with RAS address re-mapping

1996-02-09

1999-07-20

Cabeca, John W.

Electrical computers and digital processing systems: memory

Storage accessing and control

Specific memory composition

711104, 711106, 711 5, 365193, 36523002, 36523003, 36523006, 365222, G06F 1200

Patent

active

059268271

ABSTRACT:
The signal configuration for addressable DRAMs from a system is changed from a signal that actuates a single bank of DRAMs having Y/X row/column addresses actuated by a single RAS, to a signal configuration that provides two RAS signals for two banks of DRAMs having Y-1/X row/column addresses actuated by two RAS signals. This is done by converting the high order address bit from the system to a RAS signal actuated by a system RAS when, and only when, the high order bit is of a given value.

REFERENCES:
patent: 5161218 (1992-11-01), Catlin
patent: 5465237 (1995-11-01), Chen et al.
patent: 5500831 (1996-03-01), Chen et al.
patent: 5596741 (1997-01-01), Thome
patent: 5600604 (1997-02-01), Chen
patent: 5613094 (1997-03-01), Khan

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