High density signal interposer with power and ground wrap

Details High density signal interposer with power and ground wrap High density signal interposer with power and ground wrap

1998-11-13

2000-06-27

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257691, 257781, 257698, 257738, 257778, 257780, 257774, 361794, 361795, H01L 2312, H01L 23053

Patent

active

060810262

ABSTRACT:
An interposer for providing power, ground, and signal connections between an integrated circuit chip or chips and a substrate. The interposer includes a signal core and external power/ground connection wrap. The two sections may be fabricated and tested separately, then joined together using z-connection technology. The signal core is a dielectric film with patterned metal on both sides. The two metal layers are interconnected by a through via or post process. The power/ground wrap includes an upper substrate positioned above the signal core and a lower substrate positioned below the signal core. The upper and lower substrates of the power/ground wrap are formed from a dielectric film having a patterned metal layer on both sides connected by a through via or post process. The upper power/ground wrap substrate, signal core, and lower power/ground substrate are interconnected as desired using z-connection technology (e.g., solder or conductive ink). The power/ground layers on the upper substrate can be connected to the power/ground layers on the lower substrate by suitable edge connectors. With an integrated circuit chip or chips connected to the upper layer of the top substrate of the power/ground wrap and a printed circuit board or other mounting substrate connected to the bottom layer of the lower substrate of the wrap, the inventive interposer provides a set of high density and electrically isolated signal, power, and ground interconnections.

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