High-density semiconductor memory device with charge-coupling me

Details High-density semiconductor memory device with charge-coupling me High-density semiconductor memory device with charge-coupling me

1984-08-30

1987-02-03

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365195, 365218, G11C 1140, G11C 1300

Patent

active

046412808

ABSTRACT:
A high-density semiconductor memory with charge-coupling memory cells is disclosed. Each CC cell includes three field effect transistors and one capacitor, which are integrated in a small area by sharing their nodes with one another. A P.sup.+ type semiconductor layer of high-impurity concentration is formed in a shallow N type semiconductive layer and is electrically floating to function as the data storage capacitor. The potential corresponding to the data storage in the above P.sup.+ layer controls the readout current flowing through the N layer.

REFERENCES:
patent: 4435790 (1984-03-01), Tickle et al.
K. Terada et al, "A New VLSI Memory Cell Using Capacitance Coupling", IEDM '82 Tech. Dig., pp. 624-627.

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