High density semiconductor memory device formed in a well and ha

Details High density semiconductor memory device formed in a well and ha High density semiconductor memory device formed in a well and ha

1977-03-15

1979-04-24

Konick, Bernard

Static information storage and retrieval

Read/write circuit

Data refresh

307238, 357 46, 365150, 365178, 365182, G11C 1124, G11C 1140, G11C 700

Patent

active

041516109

ABSTRACT:
A semiconductor memory device comprising an N conductivity type semiconductor substrate, a P conductivity type well formed in a specified section of the surface of the semiconductor substrate, N conductivity type source and drain regions formed in the P conductivity type well, and a gate insulation layer deposited on the surface of the well over the source and drain regions. The P conductivity type well has a higher impurity concentration than the N conductivity type semiconductor substrate and the N conductivity type source and drain regions have a higher impurity concentration than the P conductivity type well. An insulation film is formed on the drain region and the insulation film, a metal electrode layer deposited on the insulation film and drain region collectively institute a capacitor.

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Fang et al., "Ion Implanted, Bidirectional High Voltage Metal-Oxide-Semiconductor-Field-Effect-Transistor", IBM Tech. Disc. Bull., vol. 15, No. 12, May, 1973, p. 3884.

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