High density semiconductor memory device

Details High density semiconductor memory device High density semiconductor memory device

1997-11-10

1998-06-23

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257905, H01L 27108

Patent

active

057708746

ABSTRACT:
A high density semiconductor memory device includes: a semiconductor substrate; and a plurality of memory cell groups formed on the semiconductor substrate, each of the memory cell groups including a plurality of memory cells having one common source/drain region, wherein when a surface of the semiconductor substrate is divided into a plurality of areas which are arranged in a matrix of rows extending in a first direction and columns extending in a second direction intersecting the first direction, the memory cell groups are selectively arranged in the areas such that the memory cell groups are located in every other one of the areas arranged in each of the rows and also in every other one of the areas arranged in each of the columns.

REFERENCES:
patent: 4651183 (1987-03-01), Lange et al.
patent: 5250831 (1993-10-01), Ishii
patent: 5332923 (1994-07-01), Taleuchi

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