Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2006-01-31
2006-01-31
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S185140, C365S185180
Reexamination Certificate
active
06992925
ABSTRACT:
A programmable memory cell comprised of a transistor located at the crosspoint of a column bitline and a row wordline is disclosed. The transistor has its gate formed from the column bitline and its source connected to the row wordline. The memory cell is programmed by applying a voltage potential between the column bitline and the row wordline to produce a programmed p+ region to form a p-n diode in the substrate underlying the gate of the transistor. Further, the wordline is formed from a buried diffusion N+ layer while the column bitline is formed from a counterdoped polysilicon layer.
REFERENCES:
patent: 3634929 (1972-01-01), Yoshida et al.
patent: 4322822 (1982-03-01), McPherson
patent: 4488262 (1984-12-01), Basire et al.
patent: 4490900 (1985-01-01), Chiu
patent: 4502208 (1985-03-01), McPherson
patent: 4507757 (1985-03-01), McElroy
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 4546273 (1985-10-01), Osman
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4613886 (1986-09-01), Chwang
patent: 4677742 (1987-07-01), Johnson
patent: 4720818 (1988-01-01), Takeguchi
patent: 4758745 (1988-07-01), El Gamal et al.
patent: 4758986 (1988-07-01), Kuo
patent: 4794562 (1988-12-01), Kato et al.
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4870302 (1989-09-01), Freeman
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 4962342 (1990-10-01), Mead et al.
patent: 5138410 (1992-08-01), Takebuchi
patent: 5150179 (1992-09-01), Gill
patent: 5303185 (1994-04-01), Hazani
patent: 5304871 (1994-04-01), Dharmarajan et al.
patent: 5323342 (1994-06-01), Wada et al.
patent: 5412244 (1995-05-01), Hamdy et al.
patent: 5455525 (1995-10-01), Ho et al.
patent: 5477499 (1995-12-01), Van Buskirk et al.
patent: 5496756 (1996-03-01), Sharma et al.
patent: 5576568 (1996-11-01), Kowshik
patent: 5578848 (1996-11-01), Kwong et al.
patent: 5586270 (1996-12-01), Rotier et al.
patent: 5587603 (1996-12-01), Kowshik
patent: 5600265 (1997-02-01), El Gamal et al.
patent: 5650336 (1997-07-01), Eriguchi et al.
patent: 5675541 (1997-10-01), Leterrier
patent: 5675547 (1997-10-01), Koga
patent: 5745417 (1998-04-01), Kobayashi et al.
patent: 5781032 (1998-07-01), Bertolet et al.
patent: 5784636 (1998-07-01), Rupp
patent: 5825200 (1998-10-01), Kolze
patent: 5825201 (1998-10-01), Kolze
patent: 5880512 (1999-03-01), Gordon et al.
patent: 5889411 (1999-03-01), Chaudhary
patent: 5892962 (1999-04-01), Cloutier
patent: 5909049 (1999-06-01), McCollum
patent: 5929482 (1999-07-01), Kawakami
patent: 5986931 (1999-11-01), Caywood
patent: 5986939 (1999-11-01), Yamada
patent: 6016268 (2000-01-01), Worley
patent: 6031761 (2000-02-01), Ghilardelli et al.
patent: 6034893 (2000-03-01), Mehta
patent: 6040968 (2000-03-01), Duvvury et al.
patent: 6047243 (2000-04-01), Bang
patent: 6064225 (2000-05-01), Andrews et al.
patent: 6064595 (2000-05-01), Logie et al.
patent: 6077719 (2000-06-01), Koike
patent: 6084428 (2000-07-01), Kolze et al.
patent: 6097077 (2000-08-01), Gordon et al.
patent: 6153463 (2000-11-01), Wei et al.
patent: 6157568 (2000-12-01), Schmidt
patent: 6166954 (2000-12-01), Chern
patent: 6198652 (2001-03-01), Kawakubo
patent: 6214666 (2001-04-01), Mehta
patent: 6215140 (2001-04-01), Reisinger et al.
patent: 6218274 (2001-04-01), Komatsu
patent: 6232631 (2001-05-01), Schmidt et al.
patent: 6236229 (2001-05-01), Or-Bach
patent: 6249809 (2001-06-01), Bro
patent: 6282123 (2001-08-01), Mehta
patent: 6294809 (2001-09-01), Logie
patent: 6297103 (2001-10-01), Ahn et al.
patent: 6304666 (2001-10-01), Warren et al.
patent: 6337250 (2002-01-01), Furuhata
patent: 6351428 (2002-02-01), Forbes
patent: 6421293 (2002-07-01), Candelier et al.
patent: 6431456 (2002-08-01), Nishizawa et al.
patent: 6445619 (2002-09-01), Mihnea et al.
patent: 6456535 (2002-09-01), Forbes et al.
patent: 6459634 (2002-10-01), Sher
patent: 6476636 (2002-11-01), Lien et al.
patent: 6515509 (2003-02-01), Baxter
patent: 6556481 (2003-04-01), Hsu et al.
patent: 6602729 (2003-08-01), Lin
patent: 6633182 (2003-10-01), Pileggi et al.
patent: 6650143 (2003-11-01), Peng
patent: 6674670 (2004-01-01), Jeung
patent: 6678646 (2004-01-01), McConnell et al.
patent: 6700151 (2004-03-01), Peng
patent: 6753590 (2004-06-01), Fifield et al.
patent: 6754881 (2004-06-01), Kuhlmann et al.
patent: 6777757 (2004-08-01), Peng et al.
patent: 6856540 (2005-02-01), Peng et al.
patent: 6862205 (2005-03-01), Agata et al.
patent: 6898116 (2005-05-01), Peng
patent: 6903984 (2005-06-01), Tang et al.
patent: 2001/0003374 (2001-06-01), Bohmer et al.
patent: 2003/0218920 (2003-11-01), Harari
patent: 0 295 935 (1988-12-01), None
patent: 61292295 (1986-12-01), None
Miranda, Enrique et al; Analytic Modeling of Leakage Current Through Multiple Breakdown Paths in SiO2 Films; 39thAnnual International Reliability Physics Symposium; Orlando, FL 2001.
Lombardo, S. et al; Softening of Breakdown in Ultra-Thin Gate Oxide nMOSFET's at Low Inversion Layer Density; 39thAnnual International Reliability Physics Symposium; Orlando, FL 2001.
Wu, E.W. et al; Voltage-Dependent Voltage-Acceleration of Oxide Breakdown for Ultra-Thin Oxides; IEEE, 2000.
Rasras, Mahmoud et al; Substrate Hole Current Origin After Oxide Breakdown; IEEE, 2000.
Sune, Jordi et al; Post Soft Breakdown Conduction in SiO2 Gate Oxides; IEEE, 2000.
DeGraaf, C., et al, A Novel High-Density Low-Cost Diode Programmable Read Only Memory, IEEE, 1996.
Auduong Gene N.
Kilopass Technologies, Inc.
Perkins Coie LLP
LandOfFree
High density semiconductor memory cell and memory array... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High density semiconductor memory cell and memory array..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density semiconductor memory cell and memory array... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3574233