Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2005-09-06
2005-09-06
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S182000, C365S185180
Reexamination Certificate
active
06940751
ABSTRACT:
A programmable memory cell comprised of a transistor located at the crosspoint of a column bitline and a row wordline is disclosed. The transistor has its gate formed from the column bitline and its source connected to the row wordline. The memory cell is programmed by applying a voltage potential between the column bitline and the row wordline to produce a programmed n+ region in the substrate underlying the gate of the transistor. Further, a gate dielectric of the transistor has a higher breakdown voltage near the source connected to the row wordline than its drain.
REFERENCES:
patent: 3634929 (1972-01-01), Yoshida et al.
patent: 4322822 (1982-03-01), McPherson
patent: 4488262 (1984-12-01), Basire et al.
patent: 4490900 (1985-01-01), Chiu
patent: 4502208 (1985-03-01), McPherson
patent: 4507757 (1985-03-01), McElroy
patent: 4543594 (1985-09-01), Mohsen
patent: 4546273 (1985-10-01), Osman
patent: 4599705 (1986-07-01), Holmberg
patent: 4613886 (1986-09-01), Chwang
patent: 4677742 (1987-07-01), Johnson
patent: 4794562 (1988-12-01), Kato
patent: 4823181 (1989-04-01), Mohsen
patent: 4876220 (1989-10-01), Mohsen
patent: 4899205 (1990-02-01), Hamdy
patent: 4943538 (1990-07-01), Mohsen
patent: 4962342 (1990-10-01), Mead
patent: 5138410 (1992-08-01), Takebuchi
patent: 5150179 (1992-09-01), Gill
patent: 5303185 (1994-04-01), Hazani
patent: 5304871 (1994-04-01), Dharmarajan
patent: 5323342 (1994-06-01), Wada
patent: 5412244 (1995-05-01), Hamdy
patent: 5477499 (1995-12-01), Van Buskirk
patent: 5496756 (1996-03-01), Sharma
patent: 5576568 (1996-11-01), Kowshik
patent: 5578848 (1996-11-01), Kwong
patent: 5586270 (1996-12-01), Rotier
patent: 5587603 (1996-12-01), Kowshik
patent: 5600265 (1997-02-01), El Gamal
patent: 5675541 (1997-10-01), Leterrier
patent: 5675547 (1997-10-01), Koga
patent: 5745417 (1998-04-01), Kobayashi
patent: 5825200 (1998-10-01), Kolze
patent: 5825201 (1998-10-01), Kolze
patent: 5880512 (1999-03-01), Gordon
patent: 5909049 (1999-06-01), McCollum
patent: 5986931 (1999-11-01), Caywood
patent: 5986939 (1999-11-01), Yamada
patent: 6016268 (2000-01-01), Worley
patent: 6031761 (2000-02-01), Ghilardelli
patent: 6034893 (2000-03-01), Mehta
patent: 6040968 (2000-03-01), Duvvury
patent: 6064595 (2000-05-01), Logie
patent: 6084428 (2000-07-01), Kolze
patent: 6097077 (2000-08-01), Gordon
patent: 6157568 (2000-12-01), Schmidt
patent: 6166954 (2000-12-01), Chern
patent: 6214666 (2001-04-01), Mehta
patent: 6215140 (2001-04-01), Reisinger
patent: 6218274 (2001-04-01), Komatsu
patent: 6232631 (2001-05-01), Schmidt
patent: 6249809 (2001-06-01), Bro
patent: 6282123 (2001-08-01), Mehta
patent: 6294809 (2001-09-01), Logie
patent: 6297103 (2001-10-01), Ahn
patent: 6304666 (2001-10-01), Warren
patent: 6351428 (2002-02-01), Forbes
patent: 6421293 (2002-07-01), Candelier
patent: 6431456 (2002-08-01), Nishizawa
patent: 6445619 (2002-09-01), Mihnea et al.
patent: 6456535 (2002-09-01), Forbes
patent: 6556481 (2003-04-01), Hsu
patent: 6753590 (2004-06-01), Fifield et al.
patent: 2001/0003374 (2001-06-01), Bohmer
patent: 2003/0218920 (2003-11-01), Harari
patent: 0 295 935 (1988-12-01), None
patent: 61292295 (1986-12-01), None
Wu, E.W. et al; Voltage-Dependent Voltage-Acceleration of Oxide Breakdown for Ultra-Thin Oxides; IEEE, 2000.
Sune, Jordi et al; Post Soft Breakdown Conduction in SiO2 Gate Oxides; IEEE, 2000.
DeGraaf, C., et al. A Novel High-Density Low-Cost Diode Programmable Read Only Memory, IEEE, 1996.
Rasras, Mahmoud et al; Substrate Hole Current Origin After Oxide Breakdown; IEEE, 2000.
Lombardo, S. et al; Softening of Breakdown in Ultra-Thin Gate Oxide nMOSFET's at Low Inversion Layer Density; 39th Annual International Reliability Physics Symposium; Orlando, FL 2001.
Miranda, Enrique et al; Analytic Modeling of Leakage Current Through Multiple Breakdown Paths in SiO2 Films; 39th Annual International Reliabiligy Physics Symposium; Orlando, FL 2001.
Fliesler Michael David
Peng Jack Zezhong
Kilopass Technologies, Inc.
Perkins Coie LLP
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