High density ROM cell

Details High density ROM cell High density ROM cell

2007-04-17

2007-04-17

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S372000, C257S373000, C257S288000, C257S390000

Reexamination Certificate

active

10707703

ABSTRACT:
A high density read-only memory (ROM) cell is installed on a silicon substrate for storing data. The ROM cell includes a first doped region being of a second conductive type installed on the silicon substrate, a plurality of first heavily doped regions being of a first conductive type installed in the first doped region, a second doped region being of the second conductive type installed on the silicon substrate, and a gate installed on the surface of the silicon substrate and adjacent to the first doped region and the second doped region.

REFERENCES:
patent: 4422092 (1983-12-01), Guterman
patent: 5677215 (1997-10-01), Goo
patent: 5825069 (1998-10-01), Wen et al.
patent: 5893738 (1999-04-01), Chen et al.
patent: 5933732 (1999-08-01), Lin et al.
patent: 6751111 (2004-06-01), Foss et al.

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