High density plasma source for semiconductor processing

Details High density plasma source for semiconductor processing High density plasma source for semiconductor processing

1997-11-19

2000-02-22

Paschall, Mark

Electric heating

Metal heating

By arc

21912152, 2191214, 118723I, 156345, 31511121, B23K 1000, C23C 1600

Patent

active

060282851

ABSTRACT:
An apparatus for producing a plasma (70) within a vacuum chamber (50) comprising a high density plasma source (10) is disclosed wherein the source (10) comprises a top layer (13) and a bottom layer (11) electrically connected to and spaced apart from each other, in a manner to adjust the fields generated by the source (10), hence the uniformity of the plasma (70), wherein the top and bottom layers (13, 11) are formed by a plurality of conductive loops.

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