High-density plasma source

Details High-density plasma source High-density plasma source

2004-04-07

2008-11-04

Philogene, Haissa (Department: 2821)

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

C315S111410, C156S345440, C118S7230DC

Reexamination Certificate

active

07446479

ABSTRACT:
The present invention relates to a plasma source. The plasma source includes a cathode assembly having an inner cathode section and an outer cathode section. An anode is positioned adjacent to the outer cathode section so as to form a gap there between. A first power supply generates a first electric field across the gap between the anode and the outer cathode section. The first electric field ionizes a volume of feed gas that is located in the gap, thereby generating an initial plasma. A second power supply generates a second electric field proximate to the inner cathode section. The second electric field super-ionizes the initial plasma to generate a plasma comprising a higher density of ions than the initial plasma.

REFERENCES:
patent: 3666982 (1972-05-01), Wiegand, Jr.
patent: 4953174 (1990-08-01), Eldridge et al.
patent: 5015493 (1991-05-01), Gruen
patent: 5247531 (1993-09-01), Muller-Horsche
patent: 5795452 (1998-08-01), Kinoshita et al.
patent: 5821548 (1998-10-01), Hinchliffe
patent: 5846883 (1998-12-01), Moslehi
patent: 6093293 (2000-07-01), Haag et al.
patent: 6124675 (2000-09-01), Bertrand et al.
patent: 6197165 (2001-03-01), Drewery et al.
patent: 6284106 (2001-09-01), Haag et al.
patent: 6296742 (2001-10-01), Kouznetsov
patent: 6395641 (2002-05-01), Savas
patent: 6413382 (2002-07-01), Wang et al.
patent: 6454920 (2002-09-01), Haag et al.
patent: 6488822 (2002-12-01), Moslehi
patent: 6506290 (2003-01-01), Ono
patent: 6585871 (2003-07-01), Anzaki et al.
patent: 6805779 (2004-10-01), Chistyakov
patent: 6806651 (2004-10-01), Chistyakov
patent: 6806652 (2004-10-01), Chistyakov
patent: 6853142 (2005-02-01), Chistyakov
patent: 6896773 (2005-05-01), Chistyakov
patent: 6896775 (2005-05-01), Chistyakov
patent: 6903511 (2005-06-01), Chistyakov
patent: 2001/0047760 (2001-12-01), Moslehi
patent: 2004/0060813 (2004-04-01), Chistyakov
patent: WO 98/40532 (1998-09-01), None
patent: WO 01/98553 (2001-12-01), None
Sheridan, et al., Electron Velocity Distribution Functions In A Sputtering Magnetron Discharge For The E×B Direction, J. Vac. Sci. Technol. A., Jul./Aug. 1998, pp. 2173-2176, vol. 16, No. 4, American Vacuum Society.
Steinbruchel, A Simple Formula For Low-Energy Sputtering Yields, Appl. Phys. A., 1985, pp. 37-42, vol. 36, Sprigner Verlag.
Encyclopedia Of Low Temperature Plasma, p. 119, vol. 3.
Encyclopedia Of Low Temperature Plasma, p. 123, vol. 3.
Booth, et al., The Transition From Symmetric To Asymemtric Discharges In Pulsed 13.56 MHz Capacitively Coupled Plasmas, J. Appl. Phys., Jul. 15, 1997, pp. 552-560, vol. 82, No. 2, American Institute of Physics.
Bunshah, et al., Deposition Technologies For Films And Coatings, pp. 178-183, Noyes Publications, Park Ridge, New Jersey.
Daugherty, et al., Attachment-Dominated Electron-Beam-Ionized Discharges, Applied Physics Letters, May 15, 1976, pp. 581-583, vol. 28, No. 10, American Institue of Physics.
Goto, et al., Dual Excitation Reactive Ion Etcher For Low Energy Plasma Processing, J. Vac. Sci. Technol. A., Sep./Oct. 1992, pp. 3048-3054, vol. 10, No. 5, American Vacuun Society.
Kouznetsov, et al., A Novel Pulsed Magnetron Sputter Technique Utilizing Very High Target Power Densities, Surface and Coatings Technology, 1999, pp. 290-293, vol. 122, Elsevier Science S.A.
Lindquist, et al., High Selectivity Plasma Etching Of Silicone Dioxide With A Dual Frequency 27/2 MHz Capacitive RF Discharge.
Macak, Reactive Sputter Deposition Process Of A1203 And Characterization Of A Novel High Plasma Density Pulsed Magnetron Discharge, Linkoping Studies In Science And Technology, pp. 1-2.
Macak, et al., Ionized Sputter Deposition Using An Extremely High Plasma Density Pulsed Magnetron Discharge, J. Vac. Sci. Technol. A., Jul./Aug. 2000, pp. 1533-1537, vol. 18, No. 4., American Vacuum Society.
Mozgrin, et al., High-Current Low-Pressure Quasi-Stationary Discharge In A Magnetic Field: Experimental Research, Plasma Physics Reports, 1995, pp. 400-409, vol. 21, No. 5.
Rossnagel, et al., Induced Drift Currents In Circular Planar Magnetrons, J. Vac. Sci. Technol. A., Jan./Feb. 1987, pp. 88-91, vol. 5, No. 1, American Vacuum Society.

Affiliated with

Also associated with

Rating

High-density plasma source does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-density plasma source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-density plasma source will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4023623