Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2007-05-01
2007-05-01
Hassanzadeh, Parviz (Department: 1763)
Coating apparatus
Gas or vapor deposition
With treating means
C156S345360, C156S345410, C156S345420, C156S345460, C156S345480, C156S345490, C118S7230IR
Reexamination Certificate
active
10843430
ABSTRACT:
A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. A reaction gas injection device injects a reaction gas into an interior of the processing chamber. An inductively coupled plasma (ICP) antenna, which is installed on a center of the dielectric window, transfers radio frequency (RF) power from an RF power supply to the interior of the processing chamber. A waveguide guides a microwave generated by a microwave generator. A circular radiative tube, which is installed on the dielectric window around the ICP antenna and is connected to the waveguide, radiates a microwave toward the interior of the processing chamber via a plurality of slots formed through a bottom wall of the radiative tube.
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Kim Dae-il
Ma Dong-joon
Navala Sergiy Yakovlevich
Tolmachev Yuri Nikolaevich
Dhingra Rakesh K.
Hassanzadeh Parviz
Lee & Morse P.C.
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