High density plasma process for silicon thin films

Details High density plasma process for silicon thin films High density plasma process for silicon thin films

2007-03-06

2007-03-06

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S767000, C438S788000, C257SE21274, C427S452000

Reexamination Certificate

active

10871939

ABSTRACT:
A method is provided for forming a Si and Si—Ge thin films. The method comprises: providing a low temperature substrate material of plastic or glass; supplying an atmosphere; performing a high-density (HD) plasma process, such as an HD PECVD process using an inductively coupled plasma (ICP) source; maintaining a substrate temperature of 400 degrees C., or less; and, forming a semiconductor layer overlying the substrate that is made from Si or Si-germanium. The HD PECVD process is capable of depositing Si at a rate of greater than 100 Å per minute. The substrate temperature can be as low as 50 degrees C. Microcrystalline Si, a-Si, or a polycrystalline Si layer can be formed over the substrate. Further, the deposited Si can be either intrinsic or doped. Typically, the supplied atmosphere includes Si and H. For example, an atmosphere can be supplied including SiH4 and H2, or comprising H2 and Silane with H2/Silane ratio in the range of 0–100.

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U.S. Appl. No. 60/477,752.

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