Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2006-12-05
2006-12-05
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S624000, C438S778000, C438S788000, C438S792000
Reexamination Certificate
active
07144822
ABSTRACT:
A method for plasma processing of semiconductor wafers is provided that reduces plasma-induced damage to the gate dielectric while limiting damage to the wafer from particulates that flake off of the interior surfaces of the reaction chamber. Plasma conditions are maintained in the reaction chamber while the wafer is transferred into the chamber and the plasma process is performed. After the plasma process, while still maintaining plasma conditions, the wafer is cooled to a removal temperature and removed from the reaction chamber.
REFERENCES:
patent: 5132244 (1992-07-01), Roy
patent: 5221414 (1993-06-01), Langley et al.
patent: 5436172 (1995-07-01), Moslehi
patent: 5673750 (1997-10-01), Tsubone et al.
patent: 5736423 (1998-04-01), Ngo
patent: 5834068 (1998-11-01), Chern et al.
patent: 5851892 (1998-12-01), Lojek et al.
patent: 5882417 (1999-03-01), Van de Ven et al.
patent: 5925212 (1999-07-01), Rice et al.
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 6028324 (2000-02-01), Su et al.
patent: 6054206 (2000-04-01), Mountsier
patent: 6143579 (2000-11-01), Chang et al.
patent: 6222228 (2001-04-01), Malone et al.
patent: 6268274 (2001-07-01), Wang et al.
patent: 6335288 (2002-01-01), Kwan et al.
patent: 6403501 (2002-06-01), Hander et al.
patent: 6524955 (2003-02-01), Fukuda et al.
patent: 6551946 (2003-04-01), Chen et al.
patent: 6660662 (2003-12-01), Ishikawa et al.
patent: 6858265 (2005-02-01), Redeker et al.
Li et al. “Gate Oxide Damage Reduction and Antenna Yield Improvement Using Low temperature Preclean for Sub-o.25 microns Metallization”, Jun. 1999, IEEE, pp. 134-136.
Guerrero Maria F.
Novellus Systems Inc.
Silicon Valley Patent & Group LLP
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