High density plasma physical vapor deposition

Details High density plasma physical vapor deposition High density plasma physical vapor deposition

1996-09-18

1998-08-11

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427 58, 427124, 427125, 4271261, 427256, 427294, 427571, 427576, H05H 130

Patent

active

057925224

ABSTRACT:
A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.

REFERENCES:
patent: 5178739 (1993-01-01), Barnes et al.
patent: 5453305 (1995-09-01), Lee

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