Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1999-08-09
2000-11-28
Niebling, John F.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438624, 438787, H01L 214763, H01L 2131
Patent
active
061535435
ABSTRACT:
A method of forming a passivation layer over features located on a top layer on a semiconductor device comprises depositing a first void-free layer of a dielectric over the top layer using high density plasma chemical vapor deposition. A second void-free layer can additionally be deposited over the first void-free layer. The first void-free layer can be formed from a silicon oxide, and the second void-free layer can be formed from a silicon nitride. The first void-free layer has a top surface that is disposed at a height higher than the features. The first void-free layer can be applied in two steps. First, the void-free layer is deposited at a D/S ratio between 3.0 and 4.0 to a depth of at least 40% of the feature's height, and then deposited at a D/S ratio of between 6.0 and 7.0.
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Barba Rafael N.
Chesire Daniel P.
Kotzias Barbara D.
Martin, Jr. Edward P.
Olmer Leonard J.
Ghyka Alexander G.
Lucent Technologies - Inc.
Niebling John F.
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