Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-09-05
2000-04-04
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438688, 438622, H01L 2144
Patent
active
060461063
ABSTRACT:
Borderless submicron vias are formed between patterned metal layers gap filled with a high density plasma oxide. Heat treatment is conducted after chemical vapor deposition of the high density plasma oxide to substantially increase the grain size of the patterned metal layers, thereby improving electromigration resistance.
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Besser Paul R.
Morales Guarionex
Pramanick Shekhar
Tran Khanh Q.
Advanced Micro Devices , Inc.
Niebling John F.
Zarneke David A.
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