High density plasma non-stoichiometric SiOxNy films

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

Reexamination Certificate

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C427S569000

Reexamination Certificate

active

07807225

ABSTRACT:
A high-density plasma method is provided for forming a SiOXNYthin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNYthin-film is formed, where (X+Y<2 and Y>0). The SiOXNYthin-film can be stoichiometric or non-stoichiometric. The SiOXNYthin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNYthin-film. Further, the process enables the in-situ deposition of a SiOXNYthin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNYthin-films.

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