Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2004-12-15
2008-11-04
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S771000, C438S798000, C257S066000, C257S532000
Reexamination Certificate
active
07446023
ABSTRACT:
A high-density plasma hydrogenation method is provided. Generally, the method comprises: forming a silicon (Si)/oxide stack layer; plasma oxidizing the Si/oxide stack at a temperature of less than 400° C., using a high density plasma source, such as an inductively coupled plasma (ICP) source; introducing an atmosphere including H2 at a system pressure up to 500 milliTorr; hydrogenating the stack at a temperature of less than 400 degrees C., using the high density plasma source; and forming an electrode overlying the oxide. The electrode may be formed either before or after the hydrogenation. The Si/oxide stack may be formed in a number of ways. In one aspect, a Si layer is formed, and the silicon layer is plasma oxidized at a temperature of less than 400 degrees C., using an ICP source. The oxide formation, additional oxidation, and hydrogenation steps can be conducted in-situ in a common chamber.
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Hartzell John W.
Joshi Pooran Chandra
Voutsas Apostolos T.
Jr. Carl Whitehead
Law Office of Gerald Maliszewski
Maliszewski Gerald
Rodgers Colleen E
Sharp Laboratories of America Inc.
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