Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-02-27
2007-02-27
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S695000, C438S728000, C257SE21230
Reexamination Certificate
active
11233538
ABSTRACT:
In one embodiment, a semiconductor substrate is placed into a process chamber. A gas mixture including a silicon-containing gas, a fluorine-containing gas, an inert gas, and an oxygen gas is introduced into the chamber at a pressure range of from about 30 mTorr to about 90 mTorr. During this time, deposition and etching processes are concurrently performed using a plasma to form a high-density plasma (HDP) insulating layer on the semiconductor substrate. A ratio of deposition to etching is from about 3:1 to about 10:1. A ratio of a flow rate of the fluorine-containing gas to a flow rate of the silicon-containing gas is less than about 0.9.
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Jeon Jin-Ho
Nam Jeong-Hoon
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co., Lgd.
Sarkar Asok K.
Yevsikov Victor V.
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