High density plasma gapfill deposition-etch-deposition...

Details High density plasma gapfill deposition-etch-deposition... High density plasma gapfill deposition-etch-deposition...

2011-07-05

2011-07-05

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S774000, C438S788000, C438S508000

Reexamination Certificate

active

07972968

ABSTRACT:
A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.

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