Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-03-26
2000-07-18
Chapman, Mark
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438720, 216 64, 216 67, 216 71, 216 74, 216 75, 216 77, H01L 21302
Patent
active
060907177
ABSTRACT:
A method in a plasma processing chamber for etching through a selected portion of a metallization layer of a wafer's layer stack. The method includes the step of etching at least partially through the metallization layer of the layer stack with an etchant source gas that consists essentially of chlorine and nitrogen. In another embodiment, the metallization layer comprises aluminum, and the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 10:1. More preferably, the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 4:1 and preferably ranges from about 1:1 to about 2:1.
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Guerra Robert
Musser Jeffrey V.
Powell Stephen F.
Webb Timothy R.
Chapman Mark
Lam Research Corporation
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