High density plasma deposition and etching apparatus

Details High density plasma deposition and etching apparatus High density plasma deposition and etching apparatus

1991-02-04

1992-06-16

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

118723, 156345, 31511141, 20429816, 20429831, 20429834, 20429837, 20429807, 20429833, 42218605, H05H 146, C23C 1434, B01J 1912

Patent

active

051222515

ABSTRACT:
A high density ionized plasma is generated in a source chamber using a single loop disposed in a plane that intercepts the central axis of the source chamber perpendicularly or at a lesser angle and spaced from the closed end of the chamber. With a longitudinal magnetic field and an inert or reactive gas injected into the source chamber, excitation of the antenna with RF energy in the 5 to 30 MHz establishes the M=0 excitation mode or components of both the M=0 and M=1 modes. Low frequency whistler waves are created which generate a uniform and high density plasma and high plasma current. The plasma source thus defined is used in combination with process chamber configurations in which static shaped or time modulated magnetic fields enhance the distribution and uniformity of the plasma at a substrate to be etched, deposited or sputtered.

REFERENCES:
patent: 4810935 (1989-03-01), Boswell
patent: 4844775 (1989-07-01), Keeble
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4948750 (1990-08-01), Kausche et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5032202 (1991-07-01), Tsai et al.

Affiliated with

Also associated with

Rating

High density plasma deposition and etching apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density plasma deposition and etching apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density plasma deposition and etching apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1751786