High density plasma deposition and etching apparatus

Details High density plasma deposition and etching apparatus High density plasma deposition and etching apparatus

1992-10-19

1995-06-06

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723AN, 156345, 20429837, C23C 1650

Patent

active

054218918

ABSTRACT:
Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably, a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The result is to advantageously shape the magnetic field in the process chamber to achieve extremely uniform processing, particularly when a unique diamond shaped pattern of gas feed lines is used wherein the diamond is arranged to be approximately tangent at four places to the outer circumference of the workpiece being processed in the apparatus.

REFERENCES:
patent: 4101411 (1978-07-01), Suzuki et al.
patent: 4368092 (1983-01-01), Steinberg
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4421898 (1983-12-01), Lundberg
patent: 4433228 (1984-02-01), Nishimatsu
patent: 4557819 (1985-12-01), Meacham et al.
patent: 4610748 (1986-09-01), Engle et al.
patent: 4626312 (1986-12-01), Tracy
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4668365 (1987-05-01), Foster et al.
patent: 4810935 (1989-05-01), Boswell
patent: 4844775 (1989-07-01), Keeble
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 4876983 (1989-10-01), Fukuda et al.
patent: 4918031 (1990-04-01), Flamm et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4948750 (1990-08-01), Kausche et al.
patent: 4963242 (1990-10-01), Sato et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5089441 (1992-02-01), Moslehi
patent: 5091049 (1992-02-01), Campbell et al.
patent: 5122251 (1992-06-01), Campbell et al.
Keizo Suzuki et al., "Microwave plasma etching," Vacuum, vol. 34, No. 10/11 (1984), pp. 953-957.
Boswell, "Plasma Production Using A Standing Helicon Wave," Physics Letters, vol. 33A (1970), pp. 457-458.
Montgomery et al., "Effects of Uniform Rotation on Helically-deformed, Resistive, Magnetohydrodynamic Equilibria," Plasma Physics and Controlled Fusion, vol. 33, No. 14 (1991), pp. 1871-1875.
Limpaecher et al., "Magnetic Multipole Containment of Large Uniform Collisionless Quiescent Plasmas," Rev. Sci. Instrum., vol. 44, No. 6 (1973), pp. 726-731.

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