High density plasma CVD reactor with combined inductive and capa

Details High density plasma CVD reactor with combined inductive and capa High density plasma CVD reactor with combined inductive and capa

1996-12-16

1999-02-02

Nuzzolillo, M.

Coating apparatus

Gas or vapor deposition

With treating means

118723IR, 118723E, 118723AN, 156345, 20429833, 20429834, C23C 1600, C23C 1400, C23F 102

Patent

active

058658963

ABSTRACT:
The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion and a vacuum pump, the reactor including a generally planar disk-shaped conductive ceiling electrode adjacent the ceiling, a helical coil antenna having a bottom winding near the top of the cylindrical side portion and a top winding generally corresponding to the second diameter near the planar disk-shaped conductive ceiling electrode, the helical coil antenna substantially spanning the height between the top of the cylindrical side portion and the ceiling, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source or (b) ground or (c) a floating potential (i.e., unconnected to any potential source). The invention is also embodied in a plasma reactor having a vacuum chamber, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports and a vacuum pump, the reactor including a conductive ceiling electrode at the top of the chamber, a coil antenna having a top generally coplanar with the ceiling electrode and a base generally coinciding with a circumference of the vacuum chamber, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source, or (b) ground or (c) a floating potential. In one embodiment, the reactor is a chemical vapor depostion plasma reactor.

REFERENCES:
patent: 4844775 (1989-07-01), Keeble
patent: 5074456 (1991-12-01), Degner et al.
patent: 5252178 (1993-10-01), Moslehi
patent: 5268200 (1993-12-01), Steger
patent: 5290993 (1994-03-01), Kaji et al.
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5614055 (1997-03-01), Fairbairn et al.

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