High density plasma CVD and etching reactor

Details High density plasma CVD and etching reactor High density plasma CVD and etching reactor

1993-08-27

1997-03-25

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723E, 118723I, 118723IR, 118723AN, 20429831, 20429833, 20429834, 20429837, 1566431, 216 68, 216 70, 216 71, 427569, 427585, 427574, C23F 102, C23C 1600, C23C 1434, H05H 124

Patent

active

056140550

ABSTRACT:
In one aspect, the invention is embodied in an RF inductively coupled plasma reactor including a vacuum chamber for processing a wafer, one or more gas sources for introducing into the chamber reactant gases, and an antenna capable of radiating RF energy into the chamber to generate a plasma therein by inductive coupling, the antenna lying in a two-dimensionally curved surface. In another aspect, invention is embodied in a plasma reactor including apparatus for spraying a reactant gas at a supersonic velocity toward the portion of the chamber overlying the wafer. In a still further aspect, the invention is embodied in a plasma reactor including a planar spray showerhead for spraying a reactant gas into the portion of the chamber overlying the wafer with plural spray nozzle openings facing the wafer, and plural magnets in an interior portion of the planar spray nozzle between adjacent ones of the plural nozzle openings, the plural magnets being oriented so as to repel ions from the spray nozzle openings. In yet another aspect, the invention is embodied in a plasma reactor including a conductive dome-shaped electrode overlying the wafer and being connectable to an electrical potential. In a still further aspect, the invention is embodied in a plasma process, including the steps of providing a vacuum processing chamber having a dome-shaped antenna, feeding a processing gas including an electronegative gas into the chamber, resonantly coupling an RF electrical signal to the antenna, and non-resonantly and inductively coupling electromagnetic energy from the antenna into a plasma formed in the processing chamber from the processing gas.

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