Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-09-15
2010-02-02
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C438S048000
Reexamination Certificate
active
07655999
ABSTRACT:
The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.
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Bui Peter Steven
Taneja Narayan Dass
Le Thao X
Patentmetrix
Trice Kimberly
UDT Sensors, Inc.
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