High-density NVRAM

Details High-density NVRAM High-density NVRAM

2005-07-12

2005-07-12

Lebentritt, Michael S. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000, C365S189011, C365S201000

Reexamination Certificate

active

06917539

ABSTRACT:
High density NVRAM. An array of memory cells capable of storing at least a megabit of information, each memory cell including a memory plug that includes a memory element that switches from a first resistance state to a second resistance state upon application of a first write voltage of a first polarity and reversibly switches from the second resistance state to the first resistance state upon application of a second write voltage of polarity opposite to the first polarity.

REFERENCES:
patent: 5496759 (1996-03-01), Yue et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5792569 (1998-08-01), Sun et al.
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5838608 (1998-11-01), Zhu et al.
patent: 5920500 (1999-07-01), Tehrani et al.
patent: 5946227 (1999-08-01), Naji
patent: 6055178 (2000-04-01), Naji
patent: 6111781 (2000-08-01), Naji
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6178131 (2001-01-01), Ishikawa et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6226160 (2001-05-01), Gallagher et al.
patent: 6236590 (2001-05-01), Bhattacharyya et al.
patent: 6242770 (2001-06-01), Bronner et al.
patent: 6256223 (2001-07-01), Sun
patent: 6331944 (2001-12-01), Monsma et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6531371 (2003-03-01), Hsu et al.
patent: 6534326 (2003-03-01), Hsu et al.
patent: 2001/0023992 (2001-09-01), Doll
patent: 2001/0048608 (2001-12-01), Numata et al.
patent: 2002/0000597 (2002-01-01), Okazawa
patent: 2002/0001224 (2002-01-01), Poechmueller
patent: 2003/0001178 (2003-01-01), Hsu et al.
patent: 2003/0003675 (2003-01-01), Hsu
patent: 2004/0160818 (2004-08-01), Rinerson et al.
Asamitsu, A. et al., “Current switching of resistive states in magnetoresistive manganites”, Nature, vol. 388, Jul. 3, 1997, 50-52.
Beck, A. et al., “Reproducible switching effect in thin oxide films for memory applications”, Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000,139-141.
Guo-Qiang Gong, “Colossal magnetoresistance of 1 000 000-fold magnitude achieved in the antiferromagnetic phase of La1-XCaxMnO3”, Applied Physics Letters, vol. 67, No. 12, Sep. 18, 1995,1783-1785.
Khartsev, S.I. et al., “Colossal magnetoresistance in ultrathin epitaxial La1-XCaXMnO3Films”, Journal of Applied Physics, vol. 87, No. 5, Mar. 1, 2000, 2394-2399.
Liu, S.Q., et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”, Applied Physics Letters, vol. 76, No. 19, May 8, 2000, 2749-2651.
Liu, S.Q., et al., “A New Concept For Non-Volatile Memory: Electric-Pulse Induced Reversible Resistance Change Effect In Magnetoresistive Films”, Space Vacuum Epitaxy Center, University of Huston, Huston TX, 7 Pages.
Rossel, C. et al., “Electrical current distribution across a metal-insulator-metal structure during bistable switching”, Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, 2892-2898.
Watanabe, Y. et al., “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3single crystals”, Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, 3738-3740.
Zhao, Y.G. et al., “Effect of oxygen content on the structural, transport, and magnetic properties of La1-δMn1-δO thin films”, Journal of Applied Physics, vol. 86, No. 11, Dec. 1, 1999, 6327-6330.
Zhuang W.W. et al, “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory(RRAM)” IEEE 2002, 0-7803-7463-X, 4 pages.

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