High density NOR flash array architecture

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE27103, C438S128000

Reexamination Certificate

active

07910976

ABSTRACT:
In one embodiment of the invention, a memory includes wordline jogs and adjacent spacers. Spacers from different wordlines may contact one another on either side of a drain contact and consequently isolate and self-align the contact in the horizontal and vertical directions.

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M. Wei, et al., “A Scalable Self-Aligned Contact NOR Flash Technology,” Jun. 12, 2007, pp. 1-2.

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