High-density nonvolatile semiconductor memory

Details High-density nonvolatile semiconductor memory High-density nonvolatile semiconductor memory

1993-11-17

1995-03-28

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257382, H01L 2914, H01L 29788

Patent

active

054019923

ABSTRACT:
A nonvolatile semiconductor memory has active regions that form parallel strips extending in a first direction in a semiconductor substrate. Each active region has source areas, drain areas, and channel areas for a series of memory cells. Floating gates are formed over the channel areas, and control gates over the floating gates. The upper surfaces of the control gates and the sides of the control gates and floating gates are covered by insulating films. Source interconnecting lines made of a conductive material are formed as parallel strips extending in a second direction different from the first direction on the semiconductor substrate, interconnecting the source areas of the memory cells.

REFERENCES:
patent: 5149665 (1992-09-01), Lee
patent: 5210047 (1993-05-01), Woo et al.

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