High density MRAM using thermal writing

Details High density MRAM using thermal writing High density MRAM using thermal writing

2005-12-27

2005-12-27

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000

Reexamination Certificate

active

06980468

ABSTRACT:
A memory cell includes a magnetic cell junction having an antiferromagnetic layer within a portion of the cell junction that is adapted to characterize a logic state of a bit written to the junction. More specifically, a memory cell includes, an antiferromagnetic layer arranged in contact with an adjacent magnetic layer within a storing portion of a magnetic cell junction. Such a magnetic cell junction configuration and a method for programming a memory cell with such a cell junction configuration may be used to improve the write selectivity of a memory cell array and reduce the amount of current needed to write a bit to a memory cell. Moreover, a memory cell includes a magnetic cell junction having an aspect ratio less than 1.6. In addition, a memory cell includes at least two resistors.

REFERENCES:
patent: 5959880 (1999-09-01), Shi et al.
patent: 6269018 (2001-07-01), Monsma et al.
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6683815 (2004-01-01), Chen et al.
patent: 2004/0001360 (2004-01-01), Subramanian et al.

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