Static information storage and retrieval – Systems using particular element – Molecular or atomic
Reexamination Certificate
2006-06-13
2006-06-13
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Molecular or atomic
C365S153000
Reexamination Certificate
active
07061791
ABSTRACT:
This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.
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Bocian David F.
Kuhr Werner G.
Lindsey Jonathan
Hoang Huan
Hunter Tom
Quine I.P. Law Group P.C.
The Regents of the University of California
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