High density MNOS transistor with ion implant into nitride layer

Details High density MNOS transistor with ion implant into nitride layer High density MNOS transistor with ion implant into nitride layer

1983-05-26

1984-11-06

Edlow, Martin H.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 52, 357 54, 357 91, 365178, 365184, H01L 2978, H01L 2934

Patent

active

044815271

ABSTRACT:
High density, simplified fabrication and the elimination of sidewalk leakage effects are achieved by the implementation of a self-aligned ion-implantation step during the fabrication of the MNOS transistor wherein, after the formation of the gate electrode of the transistor, low energy ions are implanted within the nitride layer of the MNOS transistor in the regions of the nitride layer adjacent to the gate electrode.

REFERENCES:
patent: 4330850 (1982-05-01), Jacobs et al.

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