High density MIMCAP with a unit repeatable structure

Semiconductor device manufacturing: process – Making passive device – Trench capacitor

Reexamination Certificate

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C438S386000, C438S397000, C257SE21047

Reexamination Certificate

active

10709768

ABSTRACT:
A structure, apparatus and method for utilizing vertically interdigitated electrodes serves to increase the capacitor area surface while maintaining a minimal horizontal foot print. Since capacitance is proportional to the surface area the structure enables continual use of current dielectric materials such as Si3N4 at current thicknesses. In a second embodiment of the interdigitated MIMCAP structure the electrodes are formed in a spiral fashion which serves to increase the physical strength of the MIMCAP. Also included is a spiral shaped capacitor electrode which lends itself to modular design by offering a wide range of discrete capacitive values easily specified by the circuit designer.

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