Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-07-19
2005-07-19
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S778000, C257S774000, C257S691000, C257S775000, C257S776000, C257S207000, C257S208000, C438S027000, C438S108000
Reexamination Certificate
active
06919635
ABSTRACT:
The density of plated thru holes in a glass fiber based chip carrier is increased by off-setting holes to positions in which fibers from adjacent holes will not connect. Elongated strip zones or regions having a width approximately the diameter of the holes and running along orthogonal columns and rows of holes, parallel to the direction of fibers, define regions of fibers that can possibly cause shorting between holes. Rotating a conventional X-Y grid pattern of equidistant holes so as to position, for example, alternate holes in one direction between the elongated strip zones running in the opposite direction significantly increases the distance between holes along the elongated strip zones running in each direction. The holes are positioned between elongated strip zones with sufficient clearance to compensate for variations in the linear path of fibers.
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2003 IEEE/CPMT/SEMI Int'l Electronics Manufacturing Technology Symposium by T. Nishio, et al., entitled “An Approach to Reduce Build Up Layers for Flip Chip—Ball Grid Array(FC-BGA) Substrates”.
Kawasaki Kazushige
Memis Irving
Clark Jasmine
Jordan John A.
Steinberg William H.
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