Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2007-03-06
2007-03-06
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257S758000, C257SE23141, C257SE23142, C257SE23145, C257SE21575
Reexamination Certificate
active
11085866
ABSTRACT:
An electronic structure having a first conductive layer provided by a dual damascene fabrication process; an etch-stop layer provided by the fabrication process, and electrically coupled with the first conductive layer, the etch-stop layer having a preselected dielectric constant and a predetermined geometry; and a second conductive layer, electrically coupled with the etch-stop layer. The structure can be, for example, a metal-insulator-metal capacitor, an antifuse, and the like.
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Broadcom Corporation
Estrada Michelle
Sterne Kessler Goldstein & Fox PLLC
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